Транзистор IPB025N10N3G

Транзистор IPB025N10N3G
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Доступно 900 шт.
819,99

Категории: Диоды, транзисторы

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Мин.отпуск (шт)10
Срок поставкиПод заказ
Техническое описаниеBrand: Infineon Technologies Channel Mode: Enhancement Configuration: Single Factory Pack Quantity: Factory Pack Quantity: 1000 Fall Time: 28 ns Forward Transconductance - Min: 100 S Id - Continuous Drain Current: 180 A Manufacturer: Infineon Maximum Operating Temperature: +175 C Minimum Operating Temperature: -55 C Mounting Style: SMD/SMT Number of Channels: 1 Channel Package / Case: TO-263-7 Packaging: Reel, Cut Tape, MouseReel Part # Aliases: SP000469888 IPB25N1N3GXT IPB025N10N3GATMA1 Pd - Power Dissipation: 300 W Product Category: MOSFET Product Type: MOSFET Qg - Gate Charge: 206 nC Rds On - Drain-Source Resistance: 2 mOhms Rise Time: 58 ns Series: OptiMOS 3 Subcategory: MOSFETs Technology: Si Tradename: OptiMOS Transistor Polarity: N-Channel Transistor Type: 1 N-Channel Type: OptiMOS 3 Power-Transistor Typical Turn-Off Delay Time: 84 ns Typical Turn-On Delay Time: 34 ns Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Voltage: -20 V, +20 V Vgs th - Gate-Source Threshold Voltage: 2 V Вес, г 1.6
Производитель(бренд)Infineon Technologies (IR)

Доставка курьером по Санкт-Петербургу - 500 рублей

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